MB85RC04VPNF-G-JNERE1

Product Overview

• Category: Non-volatile Ferroelectric Random Access Memory (FeRAM)
• Use: Data storage in various electronic devices
• Characteristics: High-speed read/write operations, low power consumption, non-volatility, high endurance, radiation-resistant
• Package: SOP-8 package
• Essence: Ferroelectric material used for data storage
• Packaging/Quantity: Available in tape and reel packaging, 2500 units per reel

Specifications

• Memory Capacity: 4 kilobits (512 bytes)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Data Retention: Over 10 years
• Endurance: 10^12 read/write cycles
• Standby Current: 5µA (typical)
• Active Current: 1mA (typical)

Detailed Pin Configuration

The MB85RC04VPNF-G-JNERE1 has the following pin configuration:

1. Chip Select (/CS)
2. Serial Clock (SCK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Ground (GND)
7. Power Supply (VCC)
8. No Connection (NC)

Functional Features

• High-speed read/write operations: Enables fast data access and modification.
• Low power consumption: Reduces energy usage, making it suitable for battery-powered devices.
• Non-volatility: Retains stored data even when power is disconnected.
• High endurance: Can withstand a large number of read/write cycles without degradation.
• Radiation-resistant: Suitable for use in environments with high radiation levels.

Advantages and Disadvantages

Advantages

• Fast read/write operations
• Low power consumption
• Non-volatile data storage
• High endurance
• Radiation-resistant

Disadvantages

• Limited memory capacity (4 kilobits)
• Relatively higher cost compared to other memory technologies

Working Principles

The MB85RC04VPNF-G-JNERE1 utilizes ferroelectric material for data storage. It employs a ferroelectric capacitor structure, where the polarization of the ferroelectric material represents the stored data. The state of the polarization can be changed by applying an electric field during write operations. During read operations, the polarization is measured to retrieve the stored data.

Detailed Application Field Plans

The MB85RC04VPNF-G-JNERE1 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Industrial control systems
2. Automotive electronics
3. Smart meters
4. Medical devices
5. Wearable devices

Detailed and Complete Alternative Models

1. MB85RC04V: Similar specifications and features, but available in DFN package.
2. MB85RC08V: Double the memory capacity (8 kilobits) with similar characteristics and package options.
3. MB85RC16V: Four times the memory capacity (16 kilobits) with similar characteristics and package options.

These alternative models provide options with different memory capacities while maintaining similar functionality and compatibility.

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