MB85RC16PN-G-AMERE1

Product Overview

Category: Non-volatile RAM (NVRAM)

Use: The MB85RC16PN-G-AMERE1 is a non-volatile RAM product designed for data storage in various electronic devices. It provides reliable and high-speed read/write operations, making it suitable for applications that require frequent data updates.

Characteristics: - Non-volatile: Retains data even when power is disconnected - High-speed operation: Enables fast data access - Low power consumption: Optimizes energy efficiency - Wide operating voltage range: Supports diverse electronic systems - Compact package: Facilitates integration into small form factor devices

Package: The MB85RC16PN-G-AMERE1 is available in a compact 8-pin plastic SOP (Small Outline Package) with a pin pitch of 1.27 mm.

Essence: This NVRAM product combines the benefits of both RAM and non-volatile memory technologies. It offers the speed and flexibility of RAM while ensuring data persistence without the need for a continuous power supply.

Packaging/Quantity: The MB85RC16PN-G-AMERE1 is typically supplied in reels, with 2,000 units per reel.

Specifications

• Memory capacity: 16 kilobits (2 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7 V to 3.6 V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 10 years
• Write endurance: 1 million cycles

Detailed Pin Configuration

The MB85RC16PN-G-AMERE1 has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VSS | Ground | | 2 | SDA | I2C Data | | 3 | SCL | I2C Clock| | 4 | WP | Write Protect | | 5 | VCC | Power Supply | | 6 | NC | No Connection | | 7 | NC | No Connection | | 8 | VSS | Ground |

Functional Features

• Random access: Allows read and write operations at any memory location
• Byte-level operation: Supports individual byte read and write
• Page write mode: Enables efficient writing of multiple bytes in a single operation
• Software write protection: Prevents accidental modification of stored data
• Hardware write protection: Provides an additional layer of security against unauthorized writes

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data persistence - High-speed operation for quick data access - Low power consumption prolongs battery life - Wide operating voltage range enhances compatibility - Compact package facilitates integration into space-constrained devices

Disadvantages: - Limited storage capacity compared to other non-volatile memory options - Relatively higher cost per unit compared to traditional RAM

Working Principles

The MB85RC16PN-G-AMERE1 utilizes ferroelectric random-access memory (FeRAM) technology. It stores data by utilizing the unique properties of ferroelectric materials, which can retain their polarization state even after power is removed. This allows the device to function as a non-volatile memory solution with fast read/write capabilities.

Detailed Application Field Plans

The MB85RC16PN-G-AMERE1 finds applications in various electronic systems that require reliable and non-volatile data storage. Some potential application fields include: - Industrial automation - Automotive electronics - Smart meters - Medical devices - Wearable technology

Detailed and Complete Alternative Models

• MB85RC16V: Similar to MB85RC16PN-G-AMERE1, but with a different package type (DFN)
• MB85RC16VPNF-G-JNERE1: Higher capacity variant (64 kilobits) in a DFN package
• MB85RC16T: Thinner version of MB85RC16PN-G-AMERE1, suitable for space-constrained designs

These alternative models offer similar functionality with slight variations in package type, capacity, or form factor.

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