MB85RS2MTAPH-G-JNE2

Product Overview

Category: Non-volatile RAM (NVRAM)

Use: The MB85RS2MTAPH-G-JNE2 is a non-volatile RAM product that combines the benefits of both RAM and flash memory. It provides high-speed read/write access like RAM, while also retaining data even when power is disconnected, similar to flash memory.

Characteristics: - High-speed read/write access - Non-volatile storage - Low power consumption - Wide operating temperature range - High endurance and data retention

Package: The MB85RS2MTAPH-G-JNE2 is available in a compact surface-mount package, making it suitable for various applications where space is limited.

Essence: This NVRAM product offers a reliable and efficient solution for storing critical data in applications that require both high-speed access and non-volatility.

Packaging/Quantity: The MB85RS2MTAPH-G-JNE2 is typically packaged in reels or trays, with quantities varying depending on customer requirements.

Specifications

• Capacity: 2 Megabits (256 Kilobytes)
• Interface: I2C (2-wire serial interface)
• Operating Voltage: 1.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: 10^12 read/write cycles

Detailed Pin Configuration

The MB85RS2MTAPH-G-JNE2 has the following pin configuration:

| Pin Name | Description | |----------|-------------| | VCC | Power supply voltage | | GND | Ground | | SDA | Serial data input/output | | SCL | Serial clock input |

Functional Features

• High-speed read/write access: The MB85RS2MTAPH-G-JNE2 offers fast data transfer rates, allowing for efficient read and write operations.
• Non-volatile storage: The data stored in this NVRAM product is retained even when power is disconnected, ensuring data integrity.
• Low power consumption: The MB85RS2MTAPH-G-JNE2 operates with low power consumption, making it suitable for battery-powered devices.
• Wide operating temperature range: It can withstand extreme temperatures, enabling reliable operation in various environments.
• High endurance and data retention: With a high endurance of 10^12 read/write cycles and data retention of up to 10 years, the MB85RS2MTAPH-G-JNE2 ensures long-term reliability.

Advantages and Disadvantages

Advantages: - Combines the benefits of RAM and flash memory - High-speed access and non-volatility - Low power consumption - Wide operating temperature range - High endurance and data retention

Disadvantages: - Limited capacity compared to other storage solutions - Relatively higher cost per unit compared to traditional RAM

Working Principles

The MB85RS2MTAPH-G-JNE2 utilizes ferroelectric random-access memory (FeRAM) technology. FeRAM stores data by utilizing the unique properties of ferroelectric materials, which can retain their polarization state even after power is removed. This allows for non-volatile storage with fast read/write access.

Detailed Application Field Plans

The MB85RS2MTAPH-G-JNE2 is well-suited for various applications that require both high-speed access and non-volatility. Some potential application fields include:

1. Industrial Automation: Used for storing critical data in programmable logic controllers (PLCs), ensuring data integrity during power outages or system failures.
2. Automotive Electronics: Enables reliable data storage in automotive systems, such as infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS).
3. Smart Grids: Provides non-volatile storage for energy management systems, allowing for efficient data handling and power grid optimization.
4. Medical Devices: Ensures reliable data storage in medical equipment, such as patient monitoring systems and diagnostic devices.

Detailed and Complete Alternative Models

1. MB85RS2MTAPH-G-JNE1: Similar to the MB85RS2MTAPH-G-JNE2, but with a lower capacity of 1 Megabit (128 Kilobytes).
2. MB85RS4MTAPH-G-JNE2: A higher-capacity alternative with 4 Megabits (512 Kilobytes) of storage.
3. MB85RS8MTAPH-G-JNE2: Offers even greater capacity with 8 Megabits (1 Megabyte) of storage.

These alternative models provide options for different storage requirements while maintaining similar characteristics and functionality.

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