MB85RS512TPNF-G-JNERE1

Product Overview

Category: Non-volatile RAM (NVRAM)

Use: The MB85RS512TPNF-G-JNERE1 is a non-volatile RAM product that combines the benefits of both RAM and flash memory. It provides high-speed read/write access like RAM, while also retaining data even when power is disconnected, similar to flash memory.

Characteristics: - High-speed read/write access - Non-volatile storage - Low power consumption - Wide operating temperature range - High reliability and endurance

Package: The MB85RS512TPNF-G-JNERE1 is available in a compact package, suitable for various applications.

Essence: This product offers a reliable and efficient solution for storing critical data in applications where power loss can occur.

Packaging/Quantity: The MB85RS512TPNF-G-JNERE1 is typically packaged in trays or reels, with a quantity of 1000 units per reel.

Specifications

• Memory Capacity: 512 kilobits (64 kilobytes)
• Interface: I2C
• Operating Voltage: 1.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: 10^12 read/write cycles

Detailed Pin Configuration

The MB85RS512TPNF-G-JNERE1 has the following pin configuration:

| Pin Name | Description | |----------|-------------| | VCC | Power supply voltage | | GND | Ground | | SDA | Serial data input/output | | SCL | Serial clock input |

Functional Features

• High-speed read/write access: The MB85RS512TPNF-G-JNERE1 offers fast data transfer rates, allowing for efficient data storage and retrieval.
• Non-volatile storage: The data stored in this NVRAM product is retained even when power is disconnected, ensuring data integrity.
• Low power consumption: The MB85RS512TPNF-G-JNERE1 operates with low power consumption, making it suitable for battery-powered devices.
• Wide operating temperature range: It can withstand extreme temperatures, enabling its use in various environments.
• High reliability and endurance: With a high endurance of 10^12 read/write cycles, this product ensures long-lasting performance.

Advantages and Disadvantages

Advantages: - Combines the benefits of RAM and flash memory - Fast read/write access - Data retention during power loss - Low power consumption - Suitable for wide temperature ranges - High reliability and endurance

Disadvantages: - Limited storage capacity compared to other non-volatile memory options - Higher cost compared to traditional RAM

Working Principles

The MB85RS512TPNF-G-JNERE1 utilizes ferroelectric random-access memory (FeRAM) technology. It stores data using a ferroelectric material that retains polarization states even without power. This allows for non-volatile storage and fast read/write access.

Detailed Application Field Plans

The MB85RS512TPNF-G-JNERE1 is well-suited for various applications, including: 1. Industrial automation systems 2. Automotive electronics 3. Smart meters 4. Medical devices 5. Internet of Things (IoT) devices

Detailed and Complete Alternative Models

1. MB85RC256V: 256 kilobits (32 kilobytes) capacity, I2C interface, wider operating voltage range.
2. MB85RC512V: 512 kilobits (64 kilobytes) capacity, SPI interface, lower power consumption.
3. MB85RC1MT: 1 megabit (128 kilobytes) capacity, I2C interface, higher endurance.

These alternative models offer different capacities, interfaces, and additional features to cater to specific application requirements.

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