23K256-I/P

Product Overview

Category

The 23K256-I/P belongs to the category of Serial SRAM (Static Random Access Memory) chips.

Use

This product is commonly used as a non-volatile memory solution for various electronic devices and systems.

Characteristics

• Serial interface: The 23K256-I/P utilizes a serial communication protocol, making it suitable for applications with limited pin count.
• Non-volatile storage: It retains data even when power is disconnected, ensuring data integrity.
• High-speed operation: This chip offers fast read and write access times, enhancing overall system performance.
• Low power consumption: The 23K256-I/P is designed to minimize power usage, making it ideal for battery-powered devices.
• Wide operating voltage range: It can operate within a broad voltage range, providing flexibility in different applications.

Package and Quantity

The 23K256-I/P is available in a DIP (Dual In-line Package) format. Each package contains one unit of the chip.

Specifications

• Memory capacity: 32 kilobits (4 kilobytes)
• Interface: SPI (Serial Peripheral Interface)
• Operating voltage: 2.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention: Minimum 200 years
• Endurance: Minimum 1 million write cycles

Pin Configuration

The 23K256-I/P has a total of 8 pins, which are assigned specific functions as follows:

| Pin Number | Name | Function | |------------|------|----------| | 1 | CS | Chip Select (active low) | | 2 | SCK | Serial Clock | | 3 | SI | Serial Input | | 4 | SO | Serial Output | | 5 | HOLD | Hold Input (optional) | | 6 | VSS | Ground | | 7 | VCC | Power Supply | | 8 | WP | Write Protect (active low, optional) |

Functional Features

• Random access: The 23K256-I/P allows random read and write operations, enabling efficient data manipulation.
• Byte-level addressing: It supports byte-level addressing, providing flexibility in accessing specific memory locations.
• Sequential operation: This chip offers sequential read and write modes, allowing for efficient data transfer.
• Hardware write protection: The WP pin can be used to protect the memory from accidental writes.

Advantages

• Compact size: The DIP package ensures a small footprint, making it suitable for space-constrained designs.
• Low power consumption: The chip's optimized power usage extends battery life in portable devices.
• High reliability: With non-volatile storage and robust endurance, the 23K256-I/P ensures data integrity over extended periods.
• Easy integration: The serial interface simplifies connectivity and reduces the number of required pins.

Disadvantages

• Limited memory capacity: The 23K256-I/P's 32 kilobits may not be sufficient for applications requiring large amounts of data storage.
• Slower access speed compared to parallel SRAM: Serial communication introduces additional overhead, resulting in slightly slower performance.

Working Principles

The 23K256-I/P utilizes a combination of volatile and non-volatile memory cells to store data. It employs a serial interface based on the SPI protocol to communicate with the host system. When data is written, it is stored in non-volatile memory cells that retain their state even without power. During read operations, the chip retrieves the stored data and transfers it to the host system via the serial interface.

Application Field Plans

The 23K256-I/P finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Industrial automation - Automotive electronics - Medical devices

Alternative Models

Other alternative models that offer similar functionality to the 23K256-I/P include: - 23LC1024: 1 megabit (128 kilobytes) capacity - 23A1024: 1 megabit (128 kilobytes) capacity with extended temperature range - 23LCV512: 512 kilobits (64 kilobytes) capacity with lower voltage operation

In conclusion, the 23K256-I/P is a serial SRAM chip that provides non-volatile memory storage with high reliability and low power consumption. Its compact size and easy integration make it suitable for various electronic applications. However, its limited memory capacity and slightly slower access speed compared to parallel SRAM should be considered when selecting this product.

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