M29F400BB70N6T TR

Product Overview

Category

The M29F400BB70N6T TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems. It provides a reliable and long-term storage solution for various applications.

Characteristics

• Non-volatile: The M29F400BB70N6T TR retains stored data even when power is removed.
• High capacity: With a capacity of 4 megabits (512 kilobytes), it can store a significant amount of data.
• Fast access time: The device offers quick read and write operations, ensuring efficient data retrieval and storage.
• Low power consumption: The M29F400BB70N6T TR is designed to minimize power usage, making it suitable for battery-powered devices.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V, providing flexibility in different electronic systems.

Package and Quantity

The M29F400BB70N6T TR is available in a surface-mount TSOP-48 package. It is typically sold in reels containing a specific quantity, such as 2500 units per reel.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage Range: 2.7V to 3.6V
• Access Time:
  • Read: 70 ns
  • Program: 10 ms
  • Erase: 1.5 s
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-48

Detailed Pin Configuration

The M29F400BB70N6T TR has a total of 48 pins. Here is a detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VSS
13. DQ0
14. DQ1
15. DQ2
16. DQ3
17. DQ4
18. DQ5
19. DQ6
20. DQ7
21. WE#
22. OE#
23. CE#
24. BYTE#
25. VCC
26. RP#
27. RE#
28. WP#
29. RESET#
30. NC
31. A15
32. A13
33. A11
34. A10
35. A9
36. A8
37. DQ15
38. DQ14
39. DQ13
40. DQ12
41. DQ11
42. DQ10
43. DQ9
44. DQ8
45. VSS
46. VSS
47. VCC
48. VCC

Functional Features

The M29F400BB70N6T TR offers the following functional features:

• Byte-wide and word-wide operations: It supports both byte-level and word-level read and write operations, providing flexibility in data handling.
• Block erase capability: The device allows for erasing data in large blocks, enhancing efficiency in memory management.
• Hardware and software protection mechanisms: It includes various protection features to prevent accidental modification or unauthorized access to stored data.
• Automatic program and erase algorithms: The M29F400BB70N6T TR incorporates built-in algorithms that simplify the programming and erasing processes.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enables quick data retrieval and storage.
• Low power consumption makes it suitable for battery-powered devices.
• Wide operating voltage range provides compatibility with different electronic systems.

Disadvantages

• Relatively slower program and erase times compared to some other memory technologies.
• Limited endurance, with a finite number of program/erase cycles before degradation may occur.

Working Principles

The M29F400BB70N6T TR utilizes flash memory technology to store and retrieve data. It employs a grid of memory cells that can be electrically programmed and erased. The device uses a combination of transistors and floating gate structures to trap and release electrical charges, representing the binary states of data (0s and 1s). When reading data, the stored charges are detected and interpreted as digital information.

Detailed Application Field Plans

The M29F400BB70N6T TR finds application in various electronic systems, including but not limited to:

1. Embedded systems: Used for firmware storage in microcontrollers and