M29F400BT70N6

Product Overview

Category

M29F400BT70N6 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F400BT70N6 retains stored data even when power is removed.
• High capacity: With a capacity of 4 megabits (512 kilobytes), it can store a significant amount of data.
• Fast access time: The device offers quick access to stored information, enhancing overall system performance.
• Reliable: It has a high endurance and can withstand numerous read and write cycles without data corruption.
• Low power consumption: The M29F400BT70N6 operates efficiently, consuming minimal power during operation.

Package

The M29F400BT70N6 is available in a standard 48-pin TSOP (Thin Small Outline Package) format.

Essence

The essence of the M29F400BT70N6 lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of M29F400BT70N6 devices. The exact quantity may vary depending on the supplier.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29F400BT70N6 features a 48-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. /CE (Chip Enable)
18. /OE (Output Enable)
19. /WE (Write Enable)
20. VSS (Ground)
21. DQ0
22. DQ1
23. DQ2
24. DQ3
25. DQ4
26. DQ5
27. DQ6
28. DQ7
29. VCC (Power Supply)
30. NC (No Connection)
31. /RP (Reset/Protection)
32. /BYTE (Byte/Word Organization)
33. VPP (Programming Voltage)
34. /ACC (Accelerate)
35. /WP (Write Protect)
36. /RP (Reset/Protection)
37. /ACC (Accelerate)
38. /BYTE (Byte/Word Organization)
39. VPP (Programming Voltage)
40. /ACC (Accelerate)
41. /BYTE (Byte/Word Organization)
42. VPP (Programming Voltage)
43. /ACC (Accelerate)
44. /BYTE (Byte/Word Organization)
45. VPP (Programming Voltage)
46. /ACC (Accelerate)
47. /BYTE (Byte/Word Organization)
48. VPP (Programming Voltage)

Functional Features

• Erase and Program Operations: The M29F400BT70N6 supports both sector erase and byte/word programming operations.
• Automatic Page Write: It allows for efficient programming of multiple bytes/words in a single operation.
• Hardware Reset/Protection: The device features a hardware reset/protection mechanism to prevent accidental data corruption.
• Write Protection: The M29F400BT70N6 offers write protection functionality to safeguard stored data from unauthorized modifications.

Advantages and Disadvantages

Advantages

• High capacity for storing large amounts of data.
• Non-volatile memory ensures data retention even during power loss.
• Fast access time enhances system performance.
• Reliable and durable, with high endurance for read and write operations.
• Low power consumption for efficient operation.

Disadvantages

• Limited storage capacity compared to newer memory technologies.
• Parallel interface may not be suitable for all applications.
• Higher cost per bit compared to some alternative memory solutions.

Working Principles

The M29F400BT70N6 utilizes flash memory technology to store data. It employs a combination of floating-gate transistors and charge trapping mechanisms to retain information even when power is removed. The device can be erased and programmed using specific voltage levels and timing sequences, allowing for data modification as required.

Detailed Application Field Plans

The M29F400BT70N6 finds application in various electronic devices, including but not limited to: - Computers