MT29F1G08ABAFAH4-ITE:F TR

Product Overview

Category

The MT29F1G08ABAFAH4-ITE:F TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-density storage: The MT29F1G08ABAFAH4-ITE:F TR offers a large storage capacity, allowing for the storage of significant amounts of data.
• Fast data transfer: It provides high-speed data transfer rates, enabling quick access to stored information.
• Reliable performance: This NAND flash memory chip ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F1G08ABAFAH4-ITE:F TR comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABAFAH4-ITE:F TR is typically packaged in surface-mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gigabit (1 Gb)
• Organization: 128 Megabytes x 8 bits
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F1G08ABAFAH4-ITE:F TR has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data inputs/outputs
4. WE#: Write enable
5. CE#: Chip enable
6. RE#: Read enable
7. CLE: Command latch enable
8. ALE: Address latch enable
9. WP#: Write protect
10. R/B#: Ready/busy

Functional Features

• Page Program Operation: The MT29F1G08ABAFAH4-ITE:F TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Random Access: This NAND flash memory chip allows for random access to data, facilitating efficient retrieval and modification.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it may become unreliable.
• Susceptible to electrical interference: NAND flash memory can be affected by electromagnetic interference, potentially leading to data corruption.

Working Principles

The MT29F1G08ABAFAH4-ITE:F TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells store information by trapping electric charges within floating gate transistors. To read or write data, specific voltage levels are applied to the appropriate pins, enabling the movement of charges and altering the state of the memory cells.

Detailed Application Field Plans

The MT29F1G08ABAFAH4-ITE:F TR is widely used in various electronic devices that require non-volatile storage, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F1G08ABADAWP-ITE:F TR
2. MT29F1G08ABAEAWP-ITE:F TR
3. MT29F1G08ABBEAWP-ITE:F TR
4. MT29F1G08ABBDAWP-ITE:F TR
5. MT29F1G08ABBFAWP-ITE:F TR

These alternative models offer similar specifications and functionality to the MT29F1G08ABAFAH4-ITE:F TR, providing customers with a range of options for their specific requirements.

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