MT29F8G08ABACAWP-IT:C TR

Product Overview

Category

MT29F8G08ABACAWP-IT:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F8G08ABACAWP-IT:C TR offers a storage capacity of 8 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over an extended period.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F8G08ABACAWP-IT:C TR comes in a compact form factor, enabling easy integration into various electronic devices.

Package and Quantity

The product is packaged in a small outline integrated circuit (SOIC) package. Each package contains one unit of MT29F8G08ABACAWP-IT:C TR.

Specifications

• Storage Capacity: 8 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The pin configuration of MT29F8G08ABACAWP-IT:C TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE#: Chip enable
4. RE#: Read enable
5. WE#: Write enable
6. CLE: Command latch enable
7. ALE: Address latch enable
8. WP#: Write protect
9. R/B#: Ready/busy
10. DQ0-DQ7: Data input/output

Functional Features

• Block Erase: MT29F8G08ABACAWP-IT:C TR supports block erase functionality, allowing for efficient erasure of data in large chunks.
• Page Program: It enables the programming of data at the page level, facilitating fast and flexible data storage.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: This feature evenly distributes write operations across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other memory technologies

Working Principles

MT29F8G08ABACAWP-IT:C TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells store information by trapping electrons within floating gate transistors. When reading or writing data, electrical charges are applied to specific memory cells to either detect or modify the trapped charge levels.

Detailed Application Field Plans

MT29F8G08ABACAWP-IT:C TR finds applications in various electronic devices, including: 1. Smartphones and tablets for data storage and app installation. 2. Digital cameras for storing photos and videos. 3. Solid-state drives (SSDs) for high-speed data storage in computers and servers. 4. Portable media players for storing music and video files.

Detailed and Complete Alternative Models

1. MT29F8G08ABACAWP-IT: This is the non-temperature range version of the same product.
2. MT29F8G08ABACAWP-IT:B TR: Similar to the main model but with a different package type.
3. MT29F8G08ABACAWP-IT:C: A variant without the temperature range specification.

These alternative models offer similar functionality and characteristics, providing options for different application requirements.

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