MT47H256M8EB-25E:C

Product Overview

Category

MT47H256M8EB-25E:C belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Reliable performance
• Compatibility with various platforms and architectures

Package

MT47H256M8EB-25E:C is available in a compact and standardized package, designed for easy integration into circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enabling smooth operation of electronic devices.

Packaging/Quantity

MT47H256M8EB-25E:C is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 256M x 8 bits
• Speed Grade: 25E
• Operating Voltage: 1.5V
• Clock Frequency: Up to 800 MHz
• Data Transfer Rate: Up to 1600 Mbps
• Refresh Cycle Time: 7.8 µs (64 ms refresh interval)

Detailed Pin Configuration

The MT47H256M8EB-25E:C chip has a total of 78 pins, which are arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. NC
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. VSS
30. A8
31. A9
32. A10
33. A11
34. A12
35. A13
36. A14
37. A15
38. VSS
39. BA0
40. BA1
41. RAS#
42. CAS#
43. WE#
44. CS#
45. VSS
46. DM0
47. DM1
48. VSS
49. DQS0#
50. DQS0
51. VSS
52. DQS1#
53. DQS1
54. VSS
55. DQS2#
56. DQS2
57. VSS
58. DQS3#
59. DQS3
60. VSS
61. DQSN0
62. DQSN1
63. VSS
64. DQSN2
65. DQSN3
66. VSS
67. DQSP0
68. DQSP1
69. VSS
70. DQSP2
71. DQSP3
72. VSS
73. VREF
74. VDD
75. VDD
76. VSS
77. VSS
78. VSS

Functional Features

• High-speed data access and transfer
• Support for burst mode operations
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for power-saving
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for efficient data handling
• Fast data access and transfer rates enhance system performance
• Low power consumption contributes to energy efficiency
• Reliable performance ensures stable operation of electronic devices
• Compatibility with various platforms and architectures offers flexibility in design and integration

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

MT47H256M8EB-25E:C operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data needs to be accessed or written, the appropriate row and column addresses are provided, allowing the memory controller to retrieve or modify