TE28F160C3TD70A

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • High capacity
  • Non-volatile memory
  • Fast read and write speeds
• Package: TSOP (Thin Small Outline Package)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Capacity: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 minimum

Detailed Pin Configuration

The TE28F160C3TD70A has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. VCC (Power)
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE# (Write Enable)
28. CE# (Chip Enable)
29. RE# (Read Enable)
30. WP# (Write Protect)
31. RY/BY# (Ready/Busy)
32. VSS (Ground)
33. RESET#
34. ALE (Address Latch Enable)
35. CLE (Command Latch Enable)
36. BYTE# (Byte/Word Organization)
37. VCC (Power)
38. VPP (Program/Erase Voltage)
39. DQ15
40. DQ14
41. DQ13
42. DQ12
43. DQ11
44. DQ10
45. DQ9
46. DQ8
47. VSS (Ground)
48. VCC (Power)

Functional Features

• High-speed data transfer
• Reliable and durable storage solution
• Low power consumption
• Easy integration into electronic devices
• Support for various read and write operations

Advantages

• Large storage capacity
• Fast access times
• Non-volatile memory retains data even without power
• Wide operating temperature range allows usage in various environments
• High endurance with a minimum of 100,000 erase/program cycles

Disadvantages

• Limited storage capacity compared to newer flash memory technologies
• Relatively slower access times compared to newer flash memory technologies
• Higher power consumption compared to more advanced flash memory solutions

Working Principles

The TE28F160C3TD70A utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information, which can be read or modified through specific electrical operations. The memory cells are organized in a grid-like structure, allowing efficient storage and retrieval of data.

Detailed Application Field Plans

The TE28F160C3TD70A is commonly used in various electronic devices that require non-volatile data storage. Some application fields include: - Consumer electronics (e.g., digital cameras, MP3 players) - Automotive systems (e.g., infotainment systems, engine control units) - Industrial equipment (e.g., programmable logic controllers, data loggers) - Communication devices (e.g., routers, switches)

Detailed and Complete Alternative Models

• TE28F160C3TD70B
• TE28F160C3TD70C
• TE28F160C3TD70D
• TE28F160C3TD70E

These alternative models offer similar specifications and functionality to the TE28F160C3TD70A, providing customers with options based on their specific requirements.

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