MRF6P23190HR5

1. Product Overview

Category:

The MRF6P23190HR5 belongs to the category of RF Power Transistors.

Use:

It is used for high-power amplification in radio frequency (RF) applications, such as in radar systems, communication equipment, and industrial heating processes.

Characteristics:

• High power output
• Broadband capability
• High efficiency
• High linearity

Package:

The MRF6P23190HR5 is typically available in a metal-ceramic package for enhanced thermal performance and durability.

Essence:

The essence of the MRF6P23190HR5 lies in its ability to deliver high-power RF amplification with excellent efficiency and linearity.

Packaging/Quantity:

The transistor is usually supplied in individual packaging and quantities may vary based on supplier specifications.

2. Specifications

• Frequency Range: 2110 - 2170 MHz
• Output Power: 190 Watts
• Gain: 15 dB
• Efficiency: 45%
• Voltage: 32V
• Current: 16A

3. Detailed Pin Configuration

The MRF6P23190HR5 has a standard pin configuration with specific pins designated for input, output, biasing, and grounding. Refer to the datasheet for the detailed pinout diagram.

4. Functional Features

• High power gain
• Wide bandwidth
• Excellent linearity
• Robust construction for reliable operation in demanding environments

5. Advantages and Disadvantages

Advantages:

• High power output
• Wide frequency coverage
• High efficiency
• Good linearity

Disadvantages:

• Higher cost compared to lower power transistors
• Requires careful thermal management due to high power dissipation

6. Working Principles

The MRF6P23190HR5 operates on the principle of amplifying RF signals by converting DC power into RF power with high efficiency and minimal distortion.

7. Detailed Application Field Plans

Radar Systems:

The transistor can be used in radar systems for high-power RF amplification in both military and civilian applications.

Communication Equipment:

It finds application in base stations and other communication equipment requiring high-power RF amplification.

Industrial Heating Processes:

In industrial applications, the transistor can be utilized for RF heating processes where high power and efficiency are essential.

8. Detailed and Complete Alternative Models

• MRF6S21140HSR5
• MRF6S21140NBR5
• MRF6S21140MBR5

This completes the English editing encyclopedia entry structure for the MRF6P23190HR5, covering its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.