PD85006L-E

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistors
Use: Amplification and switching of electrical signals
Characteristics: High power handling capability, low on-resistance, fast switching speed
Package: TO-220AB
Essence: N-channel enhancement mode power field-effect transistor
Packaging/Quantity: Available in reels of 1000 units

Specifications

• Voltage Rating: 60V
• Continuous Drain Current: 75A
• On-Resistance: 8.5mΩ
• Gate Threshold Voltage: 2.5V
• Power Dissipation: 200W

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• High current handling capacity
• Low on-resistance for efficient power transfer
• Fast switching speed for rapid response

Advantages

• Suitable for high-power applications
• Efficient power management
• Fast response time

Disadvantages

• Requires careful heat dissipation due to high power dissipation
• Sensitive to voltage spikes

Working Principles

The PD85006L-E operates based on the principle of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

• Motor control systems
• Power supply units
• Audio amplifiers
• LED lighting systems

Detailed and Complete Alternative Models

1. IRF540N
2. FQP30N06L
3. STP75NF75

This comprehensive entry provides a detailed overview of the PD85006L-E, including its product category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.